unisonic technologies co., ltd ulb124 npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2011 unisonic technologies co., ltd qw-r213-013.f npn epitaxial planar transistor ? description the utc ulb124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. ? features * high speed switching * low saturation voltage * high reliability to-126 1 to- 251 1 to-220 1 ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing ULB124L-XX-TA3-T ulb124g-xx-ta3-t to-220 b c e tube ulb124l-xx-tm3-t ulb124g-xx-tm3-t to-251 b c e tube ulb124l-xx-t60-k ulb124g-xx-t60-k to-126 b c e bulk
ulb124 npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r213-013.f ? absolute maximum rating (t a =25c) parameter symbol ratings unit collector-base voltage v cbo 600 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 8 v dc 2 a collector current pulse i c 4 a dc 1 a base current pulse i b 2 a to-220 35 to-251 20 power dissipation (t c =25c) to-126 p d 1.4 w junction temperature t j 150 c storage temperature t stg -40 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25c, unless otherwise specified.) parameter symbol test conditions min typ max unit off characteristics collector-base breakdown voltage bv cbo i c =1ma 600 v collector-emitter breakdown voltage bv ceo i c =10ma 400 v emitter-base breakdown voltage bv ebo i e =1ma 8 v collector cutoff current i cbo v cb =600v 10 a emitter cutoff current i ebo v eb =9v, i c =0 10 a on characteristics h fe1 v ce = 5v, i c =0.3a 10 40 h fe2 v ce = 5v, i c =0.5a 10 dc current gain(note) h fe3 v ce = 5v, i c =1a 6 i c =0.1a, i b =10ma 0.3 v collector-emitter saturati on voltage (note) v ce(sat) i c =0.3a, i b =30ma 0.8 v i c =0.1a, i b =10ma 0.9 v base-emitter saturation voltage (note) v be(sat) i c =0.3a, i b =30ma 1.2 v switching characteristics gain-bandwidth product f t v ce =10v, i c =0.3a, f=1mhz 15 mhz note: pulse test : pulse width 380s, duty cycle 2% ? classification of h fe 1 rank b1 b2 b3 b4 b5 b6 range 10 ~ 17 13 ~ 22 18 ~ 27 23 ~ 32 28 ~ 37 33 ~ 40
ulb124 npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r213-013.f ? typical characteristics 1 100 collector current, i c (ma) 10 1000 1000 10000 100 10000 1 100 collector current (ma) 10 1000 on voltage vs. collector current 10000 100 1000 v ce = 5v saturation voltage vs. collector current v be(sat) @i c = 10i b
ulb124 npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r213-013.f ? typical characteristics(cont.) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
|
